European Tender Dry Etcher

The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity. Applications: The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity. The tool …

CPV: 38000000 Equipo de laboratorio, óptico y de precisión (excepto gafas)
Lugar de ejecución:
European Tender Dry Etcher
Organismo adjudicador:
Universiteit Twente
Número de premio:
EB-OUT 6330

1. Buyer

1.1 Buyer

Official name : Universiteit Twente
Legal type of the buyer : Body governed by public law
Activity of the contracting authority : Education

2. Procedure

2.1 Procedure

Title : European Tender Dry Etcher
Description : The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity. Applications: The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity.  The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry. The required nanometric precision of the tool is defined as the wafer-scale controllability in three-dimensional micro- and nano-machining of silicon and/or silicon-based materials. A uniform plasma density is required for highly adjustable control over the x- and y-dimensions (lateral) upon etching in the z-direction (depth), with an accuracy ± 2 nm using fluor-based chemistries with processes containing the gases Ar, O2, N2, SF6, and C4F8. The required high uniformity of the tool is defined as a uniform plasma ion density across the wafer, providing a uniform etching performance for wafer sizes of 100 mm and 150 mm, for etching a variety of nano- and/or microscale structures. The required etch performance of the tool must be achieved by a dual ICP source chamber design, utilizing a main ICP source located on top of the chamber and a second ICP source located in the side wall of the chamber close to the substrate. It is essential that the plasma zones are decoupled. A third source, called CCP or platen source, must be installed at the substrate electrode to control the ion energy.  The tool must be equipped with optical emission spectrometry (OES), laser interferometry and a chiller for the processes as defined in Appendix B Schedule of Demands and Wishes with at least an electrode temperature ranging from -20°C up to 20°C.
Procedure identifier : 569d9e22-e4f2-49e4-9070-f15ad13d1467
Previous notice : 82aa4197-3ac5-4a7a-a1ec-935e23454bc0-01
Internal identifier : EB-OUT 6330
Type of procedure : Open
Justification for the accelerated procedure :
Main features of the procedure :

2.1.1 Purpose

Main nature of the contract : Supplies
Main classification ( cpv ): 38000000 Laboratory, optical and precision equipments (excl. glasses)

2.1.2 Place of performance

Country : Netherlands
Anywhere in the given country
Additional information : Zie documentatie

2.1.3 Value

Estimated value excluding VAT : 1 050 000 Euro

2.1.4 General information

Legal basis :
Directive 2014/24/EU

5. Lot

5.1 Lot technical ID : LOT-0000

Title : European Tender Dry Etcher
Description : The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity. Applications: The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity.  The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry. The required nanometric precision of the tool is defined as the wafer-scale controllability in three-dimensional micro- and nano-machining of silicon and/or silicon-based materials. A uniform plasma density is required for highly adjustable control over the x- and y-dimensions (lateral) upon etching in the z-direction (depth), with an accuracy ± 2 nm using fluor-based chemistries with processes containing the gases Ar, O2, N2, SF6, and C4F8. The required high uniformity of the tool is defined as a uniform plasma ion density across the wafer, providing a uniform etching performance for wafer sizes of 100 mm and 150 mm, for etching a variety of nano- and/or microscale structures. The required etch performance of the tool must be achieved by a dual ICP source chamber design, utilizing a main ICP source located on top of the chamber and a second ICP source located in the side wall of the chamber close to the substrate. It is essential that the plasma zones are decoupled. A third source, called CCP or platen source, must be installed at the substrate electrode to control the ion energy.  The tool must be equipped with optical emission spectrometry (OES), laser interferometry and a chiller for the processes as defined in Appendix B Schedule of Demands and Wishes with at least an electrode temperature ranging from -20°C up to 20°C.
Internal identifier : EB-OUT 6330

5.1.1 Purpose

Main nature of the contract : Supplies
Main classification ( cpv ): 38000000 Laboratory, optical and precision equipments (excl. glasses)

5.1.2 Place of performance

Country : Netherlands
Anywhere in the given country
Additional information : Zie documentatie

5.1.5 Value

Estimated value excluding VAT : 1 050 000 Euro

5.1.6 General information

Procurement Project not financed with EU Funds.
The procurement is covered by the Government Procurement Agreement (GPA) : no

5.1.10 Award criteria

Criterion :
Type : Quality
Name : G1 Wishes
Description : See descriptive document
Criterion :
Type : Quality
Name : G2 Service level agreeement
Description : See descriptive document
Criterion :
Type : Price
Name : Price
Description : See descriptive document
Description of the method to be used if weighting cannot be expressed by criteria :
Justification for not indicating the weighting of the award criteria :

5.1.15 Techniques

Framework agreement :
No framework agreement
Information about the dynamic purchasing system :
No dynamic purchase system

5.1.16 Further information, mediation and review

Review organisation : Rechtbank Overijssel
Organisation whose budget is used to pay for the contract : Universiteit Twente
Organisation executing the payment : Universiteit Twente
Organisation signing the contract : Universiteit Twente

6. Results

Value of all contracts awarded in this notice : 1 000 000 Euro

6.1 Result lot ldentifier : LOT-0000

At least one winner was chosen.

6.1.2 Information about winners

Winner :
Official name : KLA
Tender :
Tender identifier : EB-OUT 6330
Identifier of lot or group of lots : LOT-0000
Subcontracting value is known : no
Subcontracting percentage is known : no
Contract information :
Identifier of the contract : EB-OUT 6330
Title : Agreement Dry Etcher
Date on which the winner was chosen : 03/09/2024
The contract is awarded within a framework agreement : no
Organisation signing the contract : Universiteit Twente

6.1.4 Statistical information

Received tenders or requests to participate :
Type of received submissions : Requests to participate
Number of tenders or requests to participate received : 1

8. Organisations

8.1 ORG-0001

Official name : Universiteit Twente
Registration number : 50130536
Postal address : Drienerlolaan 5
Town : Enschede
Postcode : 7522NB
Country : Netherlands
Contact point : Camilio Delfgaauw
Telephone : +31534891512
Internet address : https://www.utwente.nl
Roles of this organisation :
Buyer
Organisation signing the contract
Organisation whose budget is used to pay for the contract
Organisation executing the payment

8.1 ORG-0002

Official name : Rechtbank Overijssel
Registration number : 82940525
Town : Almelo
Country : Netherlands
Telephone : (+31)0883611042
Roles of this organisation :
Review organisation

8.1 ORG-0003

Official name : KLA
Registration number : 04-256-4110
Postal address : One Technology Drive
Town : Milpitas
Postcode : 95035
Country : United States
Contact point : Bart Van Nueten
Telephone : +32477971458
Internet address : http://www.kla.com
Roles of this organisation :
Tenderer
Winner of these lots : LOT-0000

11. Notice information

11.1 Notice information

Notice identifier/version : 3504a311-1418-445f-8d28-bf19c816f823 - 01
Form type : Result
Notice type : Contract or concession award notice – standard regime
Notice dispatch date : 04/10/2024 11:41 +00:00
Notice dispatch date (eSender) : 04/10/2024 11:41 +00:00
Languages in which this notice is officially available : English

11.2 Publication information

Notice publication number : 00600532-2024
OJ S issue number : 195/2024
Publication date : 07/10/2024